Effect of Ni interlayer on stress level of CoSi 2 films in Co/Ni/Si(1 0 0) bi-layered system
Abstract
The effect of Ni interlayer on stress level of cobalt silicides was investigated. The X-ray diffraction patterns (XRD) show that low temperature formation of Co 1- xNi xSi 2 solid solution was obtained while Ni interlayer was present in Co/Si system, which was confirmed by Auger electron spectrum (AES) and sheet resistance measurement. XRD was also used to measure the internal stress in CoSi 2 films by a 2 θψ - sin 2ψ method. The result shows that the tensile stress in CoSi 2 films evidently decreased in Co/Ni/Si(1 0 0) system. The reduction of lattice mismatch, due to the presence of Ni in Co xNi 1- xSi 2 solid solution, is proposed to explain this phenomenon.
- Publication:
-
Applied Surface Science
- Pub Date:
- December 2005
- DOI:
- 10.1016/j.apsusc.2005.03.147
- Bibcode:
- 2005ApSS..252.1679M
- Keywords:
-
- 68.35.-p;
- 68.60.-p;
- Solid surfaces and solid-solid interfaces: Structure and energetics;
- Physical properties of thin films nonelectronic
