Outdiffusion of La and Al from amorphous LaAlO3 in direct contact with Si (001)
Abstract
We have evaluated the thermal stability of Al2O3/LaAlO3/Si (001) stacks with atomic force microscopy, x-ray diffraction, transmission electron microscopy, and secondary ion mass spectrometry using a back side polishing approach. Crystallization of the amorphous LaAlO3 film was found to occur for rapid thermal anneals (RTA) above 935 °C for 20 s, in flowing N2. Penetration of Al and La into the underlying Si (001) is clearly observed for RTA at or above 950 °C for 20 s in flowing N2.
- Publication:
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Applied Physics Letters
- Pub Date:
- May 2005
- DOI:
- Bibcode:
- 2005ApPhL..86t1901S
- Keywords:
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- 77.84.Bw;
- 77.55.+f;
- 66.30.-h;
- 68.37.Ps;
- 61.43.Er;
- 81.65.Ps;
- 61.72.Cc;
- 79.20.Rf;
- 68.37.Lp;
- Elements oxides nitrides borides carbides chalcogenides etc.;
- Dielectric thin films;
- Diffusion in solids;
- Atomic force microscopy;
- Other amorphous solids;
- Polishing grinding surface finishing;
- Kinetics of defect formation and annealing;
- Atomic molecular and ion beam impact and interactions with surfaces;
- Transmission electron microscopy