We report the development of high-mobility carbon-nanotube thin-film transistors fabricated on a polymeric substrate. The active semiconducting channel in the devices is composed of a random two-dimensional network of single-walled carbon nanotubes (SWNTs). The devices exhibit a field-effect mobility of 150cm2/Vs and a normalized transconductance of 0.5mS/mm. The ratio of on-current (Ion) to off-current (Ioff) is ∼100 and is limited by metallic SWNTs in the network. With electronic purification of the SWNTs and improved gate capacitance we project that the transconductance can be increased to ∼10-100mS/mm with a significantly higher value of Ion/Ioff, thus approaching crystalline semiconductor-like performance on polymeric substrates.
Applied Physics Letters
- Pub Date:
- January 2005
- Field effect devices;
- Nanotube devices;
- Fullerenes and related materials;
- Low-field transport and mobility;