Electric Field Induced Charge Noise in Doped Silicon: Ionisation of Phosphorus Dopants
Abstract
We present measurements of aluminum single electron transistors fabricated on two silicon substrates of different doping densities. On the lower doped substrate (n=1014cm-3) the usual coulomb blockade behaviour is seen. However in the case of the more highly doped material (n=1017cm-3) a change in the coulomb oscillation period and a supplementary charge noise are noticed. These effects are attributed to the electric field induced ionisation of phosphorus dopants.
- Publication:
-
Physics of Semiconductors
- Pub Date:
- June 2005
- DOI:
- arXiv:
- arXiv:cond-mat/0410663
- Bibcode:
- 2005AIPC..772.1449F
- Keywords:
-
- 61.72.Tt;
- 72.70.+m;
- 73.23.Hk;
- Doping and impurity implantation in germanium and silicon;
- Noise processes and phenomena;
- Coulomb blockade;
- single-electron tunneling;
- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect
- E-Print:
- 4 page, 3 figures