Preparation and Characterization of Ultrathin Films and Film Coatings for Microelectronics

The work is devoted to the preparation and characterization of new thin metal film media for various types of non-volatile memories, and also to the development of new techniques for characterization of film parameters in microelectronics. We studied the physics of indirect exchange coupling in trilayer thin-film structures based on rear earth (Tb) and transition metals (Fe) with the nonmagnetic spacer (Au), which were prepared by electron-beam evaporation in an ultrahigh vacuum system. Investigations were carried out using magneto-optical and magneto-transport techniques, including know-how based on the Hall-like effect at zero applied external magnetic field. Oscillations of the Hall resistivity with the change of its sign, typical for the Ruderman-Kittel-Kasuya-Yosida model of exchange interactions, were experimentally observed. Also, a new method is presented for determining thermophysical parameters. It can be applied for non-contact and non-destructive investigation and monitoring of the adhesion of coatings or films to the substrate, both during and after deposition.