Design of quasi-lateral p-n junction for optical spin-detection in low-dimensional systems
Abstract
A technology is reviewed which allows one to produce quasi-lateral 2D electron and hole gas junctions of arbitrary shape. It may be implemented in a variety of semiconductor heterostructures. Here we concentrate on its realization in the GaAs/AlGaAs material system and discuss the possibility to use this structure for optical spin detection in low-dimensional systems.
- Publication:
-
arXiv e-prints
- Pub Date:
- November 2004
- DOI:
- 10.48550/arXiv.cond-mat/0411130
- arXiv:
- arXiv:cond-mat/0411130
- Bibcode:
- 2004cond.mat.11130K
- Keywords:
-
- Condensed Matter - Materials Science
- E-Print:
- Extract from PhD dissertation, 18 pages, 9 figures