Study of THz radiation from semiconductor surfaces excited by femtosecond laser pulses under laser illumination
Abstract
The effect of continuous-wave (cw) laser illumination on THz radiation from semiconductor surfaces such as n- and p-type GaAs, semi-insulating (SI-) GaAs and SI-InP has been studied. The THz radiation power for SI-InP decreases under cw laser illumination, which is explained by the screening of the surface electric field by the photogenerated carriers. On the other hand, an increase of 40% of the THz radiation power is observed for SI-GaAs by cw laser illumination with 167 mW. The origin of this increase is discussed in relation to the metastable defect and temperature rise in SI-GaAs.
- Publication:
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Semiconductor Science Technology
- Pub Date:
- April 2004
- DOI:
- 10.1088/0268-1242/19/4/088
- Bibcode:
- 2004SeScT..19S.264N
- Keywords:
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- THz radiationultrashort pulse lasercarrier transport