Monte Carlo simulation of hot electron transport in quantum well heterostructures under Ggr L intervalley transfer
Abstract
Monte Carlo simulations of electron transport in Al_{x}Ga_{1x} As/GaAs/In_{y}Ga_{1y}As double quantum well heterostructures in high lateral electric fields are carried out. It is shown that, under the conditions of intervalley GgrL electron transfer, there exists a population inversion between the first and the second quantumconfinement subbands in the Ggr valley. The population inversion appears in fields exceeding 4 and 5.5 kV cm^{1} at 77 and 300 K, respectively. The gain in a superlattice composed of such quantum wells is estimated to be on the order of 100 cm^{1} for radiation with a wavelength of 12.6 µm.
 Publication:

Semiconductor Science Technology
 Pub Date:
 April 2004
 DOI:
 10.1088/02681242/19/4/011
 Bibcode:
 2004SeScT..19S..29A