Relatively large electric-field induced electron drift velocity observed in an InxGa1-xAs-based p i n semiconductor nanostructure
Transient subpicosecond Raman spectroscopy has been used to measure electron transport properties in an InxGa1-xAs-based semiconductor nanostructure under the application of an electric field. The deduced electron drift velocity has been found to be significantly larger than either GaAs or InP-based p-i-n nanostructures under similar experimental conditions. We attribute this finding to both the smaller electron effective mass and the larger Ggr to L(X) energy separations in InxGa1-xAs. The experimental results are compared with ensemble Monte Carlo calculations.