REVIEWS OF TOPICAL PROBLEMS: Investigation of semiconductors with defects using Raman scattering
Abstract
The influence of defects and carriers on lattice dynamics, especially on Raman scattering from semiconductors and metals, is considered; a comparison of the theory with experimental data is made. Phonon scattering by point, line, and plane defects produces a phonon shift and phonon broadening, which influence the Raman line shape. This effect is used for investigating strain at interfaces and for characterizing semiconductor devices. Phonon interaction with carriers involves a Coulomb field excited by optical-phonon vibrations. Our treatment of the electron-phonon interaction is based on the Born-Oppenheimer adiabatic approximation. The effect of carriers is essential near the edge of the ω-k region where Landau damping appears due to the electron-hole excitation. A possibility to determine the electron-phonon coupling constant from experiments with the phonon-plasmon coupled modes is discussed.
- Publication:
-
Physics Uspekhi
- Pub Date:
- March 2004
- DOI:
- 10.1070/PU2004v047n03ABEH001735
- Bibcode:
- 2004PhyU...47..249F