Spin-Hall Insulator
Abstract
Recent theories predict dissipationless spin current induced by an electric field in doped semiconductors. Nevertheless, the charge current is still dissipative in these systems. In this work, we theoretically predict the dissipationless spin-Hall effect, without any accompanying charge current, in some classes of band insulators, including zero-gap semiconductors such as HgTe and narrow-gap semiconductors such as PbTe. This effect is similar to the quantum-Hall effect in that all the states below the gap contribute and there occurs no dissipation. However, the spin-Hall conductance is not quantized even in two dimensions. This is the first example of a nontrivial topological structure in a band insulator without any magnetic field.
- Publication:
-
Physical Review Letters
- Pub Date:
- October 2004
- DOI:
- 10.1103/PhysRevLett.93.156804
- arXiv:
- arXiv:cond-mat/0406001
- Bibcode:
- 2004PhRvL..93o6804M
- Keywords:
-
- 73.43.-f;
- 72.25.Dc;
- 72.25.Hg;
- 85.75.-d;
- Quantum Hall effects;
- Spin polarized transport in semiconductors;
- Electrical injection of spin polarized carriers;
- Magnetoelectronics;
- spintronics: devices exploiting spin polarized transport or integrated magnetic fields;
- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect;
- Condensed Matter - Materials Science
- E-Print:
- 4 pages, 2 figures, modified Introduction, accepted for publication in Phys. Rev. Lett