Tunneling Anisotropic Magnetoresistance: A Spin-Valve-Like Tunnel Magnetoresistance Using a Single Magnetic Layer
Abstract
We introduce a new class of spintronic devices in which a spin-valve-like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal insulator ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the anisotropic density of states in (Ga,Mn)As with respect to the magnetization direction and the two-step magnetization reversal process in this material.
- Publication:
-
Physical Review Letters
- Pub Date:
- September 2004
- DOI:
- 10.1103/PhysRevLett.93.117203
- arXiv:
- arXiv:cond-mat/0407735
- Bibcode:
- 2004PhRvL..93k7203G
- Keywords:
-
- 85.75.Mm;
- 75.50.Pp;
- Spin polarized resonant tunnel junctions;
- Magnetic semiconductors;
- Condensed Matter - Mesoscopic Systems and Quantum Hall Effect
- E-Print:
- 4 pages, 4 figures, submitted to PRL