From the Cover: Ten- to 50-nm-long quasi-ballistic carbon nanotube devices obtained without complex lithography
Abstract
A simple method combining photolithography and shadow (or angle) evaporation is developed to fabricate single-walled carbon nanotube (SWCNT) devices with tube lengths of ≈10-50 nm between metal contacts. Large numbers of such short devices are obtained without the need of complex tools such as electron beam lithography. Metallic SWCNTs with lengths of ≈10 nm, near the mean free path of lop ≈ 15 nm for optical phonon scattering, exhibit nearly ballistic transport at high biases and can carry unprecedented 100-μA currents per tube. Semiconducting SWCNT fieldeffect transistors with ≈50-nm channel lengths are routinely produced to achieve quasi-ballistic operations for molecular transistors. The results demonstrate highly length-scaled and high-performance interconnects and transistors realized with SWCNTs.
- Publication:
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Proceedings of the National Academy of Science
- Pub Date:
- September 2004
- DOI:
- 10.1073/pnas.0404450101
- arXiv:
- arXiv:cond-mat/0409139
- Bibcode:
- 2004PNAS..10113408J
- Keywords:
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- APPLIED PHYSICAL SCIENCES;
- Condensed Matter - Materials Science
- E-Print:
- PNAS, in press