InP quantum dots in GaInP
Abstract
InP quantum dots grown on GaInP by the Stranski-Krastanow technique are less well studied than InAs quantum dots grown on GaAs. We here give a review of the main experimental evidence for the InP dots being charged when grown in between n-type barriers.
- Publication:
-
Journal of Physics Condensed Matter
- Pub Date:
- September 2004
- DOI:
- 10.1088/0953-8984/16/35/015
- Bibcode:
- 2004JPCM...16S3737P