Environment, health and safety issues for sources used in MOVPE growth of compound semiconductors
Abstract
As metalorganic vapor-phase epitaxy (MOVPE) is becoming well-established production technology, there are equally growing concerns associated with its bearing on personnel and community safety, environmental impact and maximum quantities of hazardous materials permissible in the device fabrication operations. Safety as well as responsible environmental care has always been of paramount importance in the MOVPE-based crystal growth of compound semiconductors. In this paper, we present the findings from workplace exposure monitoring studies on conventional MOVPE sources such as trimethylgallium, triethylgallium, trimethylantimony and diethylzinc. Also reviewed are the environmental, health and safety hazard aspects for metalorganic sources of routine elements, and the means to minimize the risks (i.e., engineering controls) involved while using these MOVPE sources.
- Publication:
-
Journal of Crystal Growth
- Pub Date:
- December 2004
- DOI:
- 10.1016/j.jcrysgro.2004.09.007
- Bibcode:
- 2004JCrGr.272..816S
- Keywords:
-
- 81.05.D;
- 81.20.K