Ultralow-threshold erbium-implanted toroidal microlaser on silicon
Abstract
We present an erbium-doped microlaser on silicon operating at a wavelength of 1.5 μm that operates at a launched pump threshold as low as 4.5 μW. The 40 μm diameter toroidal microresonator is made using a combination of erbium ion implantation, photolithography, wet and dry etching, and laser annealing, using a thermally grown SiO2 film on a Si substrate as a starting material. The microlaser, doped with an average Er concentration of 2×1019 cm-3, is pumped at 1480 nm using an evanescently coupled tapered optical fiber. Cavity quality factors as high as 3.9×107 are achieved, corresponding to a modal loss of 0.007 dB/cm, and single-mode lasing is observed.
- Publication:
-
Applied Physics Letters
- Pub Date:
- February 2004
- DOI:
- 10.1063/1.1646748
- Bibcode:
- 2004ApPhL..84.1037P
- Keywords:
-
- 81.65.Cf;
- 78.55.Hx;
- 85.40.Ry;
- 42.55.Rz;
- Surface cleaning etching patterning;
- Other solid inorganic materials;
- Impurity doping diffusion and ion implantation technology;
- Doped-insulator lasers and other solid state lasers