Fabrication of a GaAs/AlGaAs ion trap for quantum computing
Abstract
One proposal for a scalable trapped-ion quantum computer calls for an array of interconnected linear radiofrequency Paul traps. We report progress on the fabrication of a micron-scale planar ion trap geometry for this purpose. The fabrication procedure uses molecular-beam epitaxy (MBE) grown, highly doped gallium arsenide as the trap electrodes and aluminum-gallium arsenide as the insulating material. We use conventional semiconductor processing techniques such as photolithographic masks and chemical etches to fabricate the structures. The unprecedented small size of the traps has both advantages such as reduced voltages needed for strong confinement of ions, and technical challenges such as the possible effects of uncontrolled charge build-up so close to the trapping region. We report the current status of testing these microtraps and some of the additional challenges we have encountered. This work is supported by the U.S. National Security Agency and Advanced Research and Development Activity under Army Research Office contract, and the National Science Foundation ITR Program.
- Publication:
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APS Division of Atomic, Molecular and Optical Physics Meeting Abstracts
- Pub Date:
- May 2004
- Bibcode:
- 2004APS..DMP.H3005M