Localization in the Transport in the Diluted Magnetic Semiconductors
Abstract
The hole-induced magnetic soliton in the diluted magnetic semiconductors is derived using the gauge invariant effective Lagrangian. We have introduced theoritically temperature dependence, T1/2, of conductivity around critical point of first Metal-Insulator transition of the diluted magnetic semiconductor (Ga,Mn)As.
- Publication:
-
Toward the Controllable Quantum States
- Pub Date:
- March 2003
- DOI:
- Bibcode:
- 2003tcqs.conf..162K