Design parameters of a tunable semiconductor multiple quantum well electron wave filter

In this paper, we discuss the use of a semiconductor multiple quantum well (MQW) electron wave filter for multi-channel communication applications. This bandpass-type electron wave energy filter, made of GaAs and Ga_0.55Al_0.45As, is designed for different numbers of layers and cavities for a pass wavelength of 10 nm. We report on the calculated values of the design parameters, such as the passband wavelength, 3-dB bandwidth, quality factor and passband loss for the electron wave filter. The design parameters are also evaluated for a tunable MQW electron wave filter when varying the angle at which the electron wave is incident on the input layer of the filter.