Self-Aligned, Vertical-Channel, Polymer Field-Effect Transistors
Abstract
The manufacture of high-performance, conjugated polymer transistor circuits on flexible plastic substrates requires patterning techniques that are capable of defining critical features with submicrometer resolution. We used solid-state embossing to produce polymer field-effect transistors with submicrometer critical features in planar and vertical configurations. Embossing is used for the controlled microcutting of vertical sidewalls into polymer multilayer structures without smearing. Vertical-channel polymer field-effect transistors on flexible poly(ethylene terephthalate) substrates were fabricated, in which the critical channel length of 0.7 to 0.9 micrometers was defined by the thickness of a spin-coated insulator layer. Gate electrodes were self-aligned to minimize overlap capacitance by inkjet printing that used the embossed grooves to define a surface-energy pattern.
- Publication:
-
Science
- Pub Date:
- March 2003
- DOI:
- 10.1126/science.1081279
- Bibcode:
- 2003Sci...299.1881S
- Keywords:
-
- APP PHYSICS