Giant Planar Hall Effect in Epitaxial (Ga,Mn)As Devices
Abstract
Large Hall resistance jumps are observed in microdevices patterned from epitaxial (Ga,Mn)As layers when subjected to a swept, in-plane magnetic field. This giant planar Hall effect is 4 orders of magnitude greater than previously observed in metallic ferromagnets. This enables extremely sensitive measurements of the angle-dependent magnetic properties of (Ga,Mn)As. The magnetic anisotropy fields deduced from these measurements are compared with theoretical predictions.
- Publication:
-
Physical Review Letters
- Pub Date:
- March 2003
- DOI:
- 10.1103/PhysRevLett.90.107201
- arXiv:
- arXiv:cond-mat/0210118
- Bibcode:
- 2003PhRvL..90j7201T
- Keywords:
-
- 75.60.-d;
- 72.80.Ey;
- 75.50.Pp;
- 75.70.-i;
- Domain effects magnetization curves and hysteresis;
- III-V and II-VI semiconductors;
- Magnetic semiconductors;
- Magnetic properties of thin films surfaces and interfaces;
- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 3 figures