We report on the structural investigation of the atomic environment of Fe impurities introduced in InP by high-temperature ion implantation. The lattice location of the implanted Fe atoms and its evolution upon annealing treatments have been investigated by means of proton-induced x-ray emission and Rutherford backscattering spectrometry in channeling conditions. X-ray absorption spectroscopy measurements have been performed in order to study the Fe local structure. The results of these measurements have been correlated to those obtained with other structural characterization techniques, as transmission electron microscopy and high-resolution x-ray diffraction, and provide an overall picture of the Fe incorporation mechanisms at the atomic level. It has been found that the high-temperature implantation process favors the incorporation of Fe in high-symmetry sites. Conversely, the point defect flux occurring during high-temperature annealing controls the kick-out of the Fe atoms from substitutional locations, leading to the formation of Fe-P complexes.
Physical Review B
- Pub Date:
- December 2003
- Doping and impurity implantation in III-V and II-VI semiconductors;
- X-ray absorption spectroscopy: EXAFS NEXAFS XANES etc.;
- Interaction between different crystal defects;
- gettering effect