The electronic band structure of the Si(111)5×2-Au surface is reinvestigated in detail by angle-resolved photoelectron spectroscopy (ARPES), especially for the surface-state bands near the Fermi energy. Through extensive ARPES measurements and analyses, four different surface-state bands are identified within the bulk band gap, the dispersions of which are determined. It was clearly shown that the Si(111)5×2-Au surface is semiconducting at room temperature with a band gap larger than ∼0.2 eV in contrast with previous ARPES results. Furthermore, the band dispersions determined are not compatible with a Peierls-gap idea proposed recently.
Physical Review B
- Pub Date:
- November 2003
- Electron states at surfaces and interfaces;
- Electronic structure of nanoscale materials: clusters nanoparticles nanotubes and nanocrystals;
- Adsorbed layers and thin films