Spin relaxation and antisymmetric exchange in n-doped III-V semiconductors
Abstract
Recently, Kavokin [Phys. Rev. B 64, 075305 (2001)] suggested that the Dzyaloshinskii-Moriya interaction between localized electrons governs slow spin relaxation in n-doped GaAs in the regime close to the metal-insulator transition. We derive the correct spin Hamiltonian and apply it to the determination of spin dephasing time using the method of moments expansion. Our estimates would give longer than the observed values of the spin-relaxation time.
- Publication:
-
Physical Review B
- Pub Date:
- January 2003
- DOI:
- 10.1103/PhysRevB.67.033203
- arXiv:
- arXiv:cond-mat/0209141
- Bibcode:
- 2003PhRvB..67c3203G
- Keywords:
-
- 71.70.Gm;
- 71.70.Ej;
- 76.30.Da;
- Exchange interactions;
- Spin-orbit coupling Zeeman and Stark splitting Jahn-Teller effect;
- Ions and impurities: general;
- Condensed Matter
- E-Print:
- 5 pages, 1 figures