Improvement of luminescence capability of Tb3+-related emission by AlxGa1-xN
Abstract
Thermal quenching of the trivalent Tb (Tb3+)-related luminescence in AlxGa1-xN (x: 0.00-0.15) is investigated. Tb ions are introduced into AlxGa1-xN epitaxial layers, which are grown by organometallic vapor phase epitaxy, by implantation at 200 keV. For all samples, strong and sharp emission peaks attributed to the 4f-4f transition of Tb3+ are observed around 490-600 nm. The thermal quenching of the luminescence intensity and the decay time related to Tb3+ transitions strongly depend on the Al contents, and the luminescence is suppressed by introducing Al into GaN. For AlxGa1-xN with x > 0.10, the Tb3+-related green photoluminescence can be observed at room temperature. (
- Publication:
-
Physica Status Solidi B Basic Research
- Pub Date:
- November 2003
- DOI:
- 10.1002/pssb.200303479
- Bibcode:
- 2003PSSBR.240..372N
- Keywords:
-
- 68.55.Ln;78.55.Cr