Silicon detectors have been made on oxygenated silicon with the incorporation of thermal donors during the oxidation process based on BNL's high-temperature long-time (thermal donor) (HTLT(TD)) technology. The initial doping concentration in HTLT(TD) silicon detectors is twice more than that of standard silicon detectors (same starting material, but no HTLT process), with TD being the dominant donor. Standard and HTLT(TD) silicon detectors have been irradiated by 10 MeV protons up to 2.5×10 14 p/ cm2. It has been found that the increase rate ( β) of the space charge concentration ( Neff) after space charge sign inversion (SCSI) in HTLT(TD) silicon detectors is about half of that in standard silicon detectors. Further improvement in proton radiation hardness has been observed in terms of the SCSI fluence. The SCSI fluence for HTLT(TD) silicon detectors is more than four times higher than that of standard detectors, although the corresponding ratio of initial space charge concentrations between the two groups of detectors is about two. This result implies that the SCSI is greatly delayed in HTLT(TD) silicon detector compared with silicon detectors with similar initial space charge (all phosphorus) concentration (lower resistivity standard silicon detectors).