Effect of low-temperature annealing on (Ga,Mn)As trilayer structures
Abstract
The effect of low-temperature annealing on (Ga,Mn)As/GaAs/(Ga,Mn)As trilayer structures is studied. Low-temperature annealing significantly increases the ferromagnetic transition temperature TC of top (Ga,Mn)As layers, reaching as high as 160 K, whereas no apparent effect is observed on bottom (Ga,Mn)As layers. The annealing effect on Be-doped trilayers is also presented.
- Publication:
-
Applied Physics Letters
- Pub Date:
- May 2003
- DOI:
- 10.1063/1.1571666
- Bibcode:
- 2003ApPhL..82.3020C
- Keywords:
-
- 75.70.Cn;
- 75.50.Dd;
- 75.30.Kz;
- 61.72.Cc;
- Magnetic properties of interfaces;
- Nonmetallic ferromagnetic materials;
- Magnetic phase boundaries;
- Kinetics of defect formation and annealing