Measurement of spatio-temporal distribution of etch product in an Inductivley Coupled Plasma by using CT-OES
Abstract
Fluorocabon plasma is a practical source for silicon dioxide ethching in LSI manufacturing process. A number of species which include electrons, ions, and radicals are generated by reactions in gas phase and on surface in plasma processing. In SiO2 etching with high rate, a large amount of volatile/nonvolatile etch products, such as SiF_ x(x=1-4), are emitted to the gas phase from the surface, and occupy a finite percentage of the gas composition. Etch products and their derivatives participate in many physical and chemical processes as ionization and dissociation in gas phase and as re-adsorption on the surface. Their space- and time- behavior have a great influence on plasma etching. It will be significant to investigate the spatio temporal structure of etch products and their daughter products, and discuss the influence to the plasma structure. In our recent study, we have measured spatio temporal structure of SiF_x(x=1,2,3) in CF_4/Ar mixture driven by RF(13.56MHz)-ICP(Inductively Coupled Plasma), by using newly developed CT(Coumputerized Tomography)-OES(Optical Emission Spectroscopy) system. We discuss the profile of the etch products near the SiO2 surface as a function of LF(500 kHz) bias source.
- Publication:
-
APS Annual Gaseous Electronics Meeting Abstracts
- Pub Date:
- October 2003
- Bibcode:
- 2003APS..GECHW1003M