Nonequilibrium spin fluctuations in single-electron transistors
Abstract
We show that nonequilibrium spin fluctuations significantly influence the electronic transport in a single-electron transistor, when the spin relaxation on the island is slow compared to other relaxation processes, and when size effects play a role. To describe spin fluctuations we generalize the `orthodox' tunneling theory to take into account the electron spin, and show that the transition between consecutive charge states can occur via a high-spin state. This significantly modifies the shape of Coulomb steps and gives rise to additional resonances at low temperatures. Recently some of our predictions were confirmed by Fujisawa et al. [Phys. Rev. Lett. 88, 236802 (2002)], who demonstrated experimentally the importance of nonequilibrum spin fluctuations in transport through quantum dots.
- Publication:
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arXiv e-prints
- Pub Date:
- September 2002
- DOI:
- 10.48550/arXiv.cond-mat/0209559
- arXiv:
- arXiv:cond-mat/0209559
- Bibcode:
- 2002cond.mat..9559M
- Keywords:
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- Condensed Matter - Mesoscale and Nanoscale Physics
- E-Print:
- 4 pages, 3 figures