Nanometer-accurate grating fabrication with scanning beam interference lithography
Abstract
We are developing a Scanning Beam Interference Lithography (SBIL) system. SBIL represents a new paradigm in semiconductor metrology, capable of patterning large-area linear gratings and grids with nanometer overall phase accuracy. Realizing our accuracy goal is a major challenge because the interference fringes have to be locked to a moving substrate with nanometer spatial phase errors while the period of the fringes has to be stabilized to approximately one part per million. In this paper, we present a review of the SBIL design, and report recent progress towards prototyping the first-ever SBIL tool.
- Publication:
-
Investigation of ultra-low-load nanoindentation for the patterning of nanostructures
- Pub Date:
- November 2002
- DOI:
- 10.1117/12.469431
- Bibcode:
- 2002SPIE.4936..126C