We present a theoretical investigation of the magnetic-field dependence of the longitudinal (T1) and transverse (T2) spin-relaxation times of conduction-band electrons in n-type III-V semiconductors. We find that the interplay between the Dyakonov-Perel process and an additional spin-relaxation channel, which originates from the electron wave-vector dependence of the electron g factor, yields a maximal T2 at a finite magnetic field. We compare our results with existing experimental data on n-type GaAs and make specific additional predictions for the magnetic-field dependence of electron-spin lifetimes.
Physical Review B
- Pub Date:
- December 2002
- Spin relaxation and scattering;
- Spin polarized transport in semiconductors;
- Condensed Matter - Materials Science
- accepted for publication in PRB, minor changes to previous manuscript