L-valley electron transport in GaAs-AlAs double-barrier resonant tunneling structures studied by ballistic electron emission microscopy
Ballistic electron emission microscopy (BEEM) is capable of injecting electrons into the L valley of a GaAs-AlAs double-barrier resonant tunneling diode (DBRTD) coherently. Resonant tunneling through the L-valley confined states of the DBRTD is then observed as additional current onsets in the BEEM spectrum, followed by a characteristic linear regime. The corresponding ballistic transport mass is derived from the effective-mass tensor by a projection in  direction and differs considerably from the GaAs and AlAs longitudinal and transversal effective masses.
Physical Review B
- Pub Date:
- July 2002
- Ballistic transport;
- Scanning probe microscopes and components;
- Electron states and collective excitations in multilayers quantum wells mesoscopic and nanoscale systems