Band anticrossing in GaP1-xNx alloys
Abstract
The optical properties of GaP1-xNx alloys (0.7%<=x<=2.3%) grown by gas-source molecular-beam epitaxy have been studied using photoluminescence spectroscopy under hydrostatic pressures up to 133 kbar at 30 K. The peak energy of the band-edge photoluminescence spectrum shows an unusual, nonmonotonic dependence on the hydrostatic pressure. The anomalous results are explained in terms of an anticrossing interaction of localized nitrogen states with the Γ band edge at low pressures and with the X band edge at large hydrostatic pressures.
- Publication:
-
Physical Review B
- Pub Date:
- May 2002
- DOI:
- 10.1103/PhysRevB.65.241303
- Bibcode:
- 2002PhRvB..65x1303W
- Keywords:
-
- 71.20.Nr;
- 62.50.+p;
- 78.20.-e;
- Semiconductor compounds;
- High-pressure and shock wave effects in solids and liquids;
- Optical properties of bulk materials and thin films