Warping in the valence band of silicon
Abstract
The origin of warping in the valence band of silicon is studied using tight-binding and k.p calculations. A number of new analytical expressions for the dispersion and effective masses are given. A measure of warping is also proposed.
- Publication:
-
Physical Review B
- Pub Date:
- June 2002
- DOI:
- 10.1103/PhysRevB.65.233204
- Bibcode:
- 2002PhRvB..65w3204H
- Keywords:
-
- 71.15.-m;
- Methods of electronic structure calculations