By comparing the voltage-current (V-I) curves obtained before and after cutting a sample of 2H-NbSe2, we separate the bulk and edge contributions to the transport current at various dissipation levels and derive their respective V-I curves and critical currents. We find that the edge contribution is thermally activated across a current dependent surface barrier. By contrast the bulk V-I curves are linear, as expected from the free flux flow model. The relative importance of bulk and edge contributions is found to depend on dissipation level and sample dimensions. We further show that the peak effect is a sharp bulk phenomenon and that it is broadened by the edge contribution.