Modelling of a microwave flowing oxygen discharge: application to remote plasma enhanced CVD of silica films
A kinetic model of low-pressure surface wave discharges in flowing oxygen has been used to study the remote microwave plasma enhanced CVD of silica. This work deals with the effect of pressure and microwave power on the computed concentrations of O2(X3Σ), O2(a1∆), O2(b1Σ), O(3P) dominant species, present in a symmetrical discharge created in a quartz tube (diameter: 30 mm). The calculations are conducted at a position located 5 cm below the centre of the wave guide. This length which corresponds to the end of the quartz tube defines the beginning of the afterglow. By correlation with the coating characteristics, the model suggests that the oxygen O(3P) active species in the afterglow plays an important role in the deposition process.