Polarity-dependent dielectric breakdown-induced epitaxy (DBIE) in Si MOSFETs Tung, C. H. ; Pey, K. L. ; Lin, W. H. ; Radhakrishnan, M. K. Abstract Publication: IEEE Electron Device Letters Pub Date: September 2002 DOI: 10.1109/LED.2002.802662 Bibcode: 2002IEDL...23..526T