During the exposure process of photolithography, wafer absorbs the exposure energy, which results in rising temperature and the phenomenon of thermal expansion. This phenomenon was often neglected due to its limited effect in the previous generation of process. However, in the new generation of process, it may very likely become a factor to be considered. In this paper, the finite element model for analyzing the transient behavior of the distribution of wafer temperature during exposure was established under the assumption that the wafer was clamped by a vacuum chuck without warpage. The model is capable of simulating the distribution of the wafer temperature under different exposure conditions. The flowchart of analysis begins with the simulation of transient behavior in a single exposure region to the variation of exposure energy, interval of exposure locations and interval of exposure time under continuous exposure to investigate the distribution of wafer temperature. The simulation results indicate that widening the interval of exposure locations has a greater impact in improving the distribution of wafer temperature than extending the interval of exposure time between neighboring image fields. Besides, as long as the distance between the field center locations of two neighboring exposure regions exceeds the straight distance equals to three image fields wide, the interacting thermal effect during wafer exposure can be ignored. The analysis flow proposed in this paper can serve as a supporting reference tool for engineers in planning exposure paths.