Noncontact potentiometry of polymer field-effect transistors
Abstract
We report on high-resolution potentiometry of operating organic thin-film field-effect transistors by means of scanning Kelvin probe force microscopy. It is demonstrated that the measured potential reflects the electrostatic potential of the accumulation layer at the semiconductor/insulator interface. We present data revealing gate bias and lateral electric field dependence of the field-effect mobility in poly(hexylthiophene) at temperatures from 50 to 300 K.
- Publication:
-
Applied Physics Letters
- Pub Date:
- April 2002
- DOI:
- 10.1063/1.1470702
- Bibcode:
- 2002ApPhL..80.2913B
- Keywords:
-
- 84.37.+q;
- 85.30.Tv;
- 07.79.-v;
- 73.61.Ph;
- 81.05.Lg;
- 73.40.Qv;
- 73.50.Dn;
- Measurements in electric variables;
- Field effect devices;
- Scanning probe microscopes and components;
- Polymers;
- organic compounds;
- Polymers and plastics;
- rubber;
- synthetic and natural fibers;
- organometallic and organic materials;
- Metal-insulator-semiconductor structures;
- Low-field transport and mobility;
- piezoresistance