Effects of the matrix on self-organization of InAs quantum nanostructures grown on InP substrates
Abstract
We have studied the influence of matrix materials on the self-organization of InAs nanostructures grown on InP substrates by molecular-beam epitaxy. Our results show that InAs quantum dots are formed on InAlGaAs, whereas quantum-wire-like structures are produced on InAlAs and InGaAs. Tuning from vertical anticorrelation in InAs/InAlAs superlattices to vertical correlation in InAs/InGaAs and InAs/InAlGaAs superlattices is observed, which is explained by the size effects in the nanostructure-nanostructure interaction.
- Publication:
-
Applied Physics Letters
- Pub Date:
- February 2002
- DOI:
- 10.1063/1.1452784
- Bibcode:
- 2002ApPhL..80.1367L
- Keywords:
-
- 81.05.Ea;
- 81.07.Bc;
- 81.15.Hi;
- 81.16.Dn;
- 68.65.La;
- III-V semiconductors;
- Nanocrystalline materials;
- Molecular atomic ion and chemical beam epitaxy;
- Self-assembly;
- Quantum wires