Current-Driven Magnetic Memory with Tunable Magnetization Switching
Abstract
Co(x nm, x=10nm or 40nm)/Cu(5nm)/Co(2.5nm) layers were deposited between copper electrodes in SiO2 vias. Magnetic states, and the corresponding resistance states, of these devices were switched by electric currents perpendicular to the layers. The I-V loops show asymmetric behavior with hysteresis. When electrons flow in the direction from thick to thin Co layer (positive current), multiple switches were observed on increasing current up to a chosen maximum positive I(write). On decreasing current from I(write), the I-V curve was smooth and characterized by considerably lower resistance. Under reverse current, an abrupt switch to the high resistance state occurred at the current value I(erase)~ -0.9*I(write). Resistance had a maximum at zero current in both states, where the ratio R(high)/R(low) could be as high as factor of four.
- Publication:
-
arXiv e-prints
- Pub Date:
- May 2001
- DOI:
- 10.48550/arXiv.cond-mat/0105290
- arXiv:
- arXiv:cond-mat/0105290
- Bibcode:
- 2001cond.mat..5290W
- Keywords:
-
- Mesoscopic Systems and Quantum Hall Effect
- E-Print:
- 10 pages, with 6 figures