Local Density of States of a ThreeDimensional Conductor in the Extreme Quantum Limit
Abstract
The electronic structure of the narrow gap semiconductor InAs is investigated by scanning tunneling spectroscopy and magnetotransport measurements in the extreme quantum limit. The wellknown oscillations of the Hall coefficient are reproduced and the last, most pronounced oscillation is shown to be correlated with the appearance of corrugations in the local density of states. While the increasing part of the Hall constant corresponds to the existence of isolated patterns indicating magnetic field induced localization, the decreasing part correlates with the development of a network which most likely consists of onedimensional channels. We conclude that the decrease of the Hall constant in the extreme quantum limit is caused by a transition from a purely threedimensional to a partly onedimensional transport regime.
 Publication:

Physical Review Letters
 Pub Date:
 February 2001
 DOI:
 10.1103/PhysRevLett.86.1582
 Bibcode:
 2001PhRvL..86.1582H