Competitive growth model involving random deposition and random deposition with surface relaxation
Abstract
A deposition model that considers a mixture of random deposition with surface relaxation and a pure random deposition is proposed and studied. As the system evolves, random deposition with surface relaxation (pure random deposition) take place with probability p and (1p), respectively. The discrete (microscopic) approach to the model is studied by means of extensive numerical simulations, while continuous equations are used in order to investigate the mesoscopic properties of the model. A dynamic scaling ansatz for the interface width W(L,t,p) as a function of the lattice side L, the time t and p is formulated and tested. Three exponents, which can be linked to the standard growth exponent of random deposition with surface relaxation by means of a scaling relation, are identified. In the continuous limit, the model can be well described by means of a phenomenological stochastic growth equation with a pdependent effective surface tension.
 Publication:

Physical Review E
 Pub Date:
 June 2001
 DOI:
 10.1103/PhysRevE.63.066132
 Bibcode:
 2001PhRvE..63f6132H
 Keywords:

 68.35.Ct;
 05.40.a;
 02.50.r;
 81.15.Aa;
 Interface structure and roughness;
 Fluctuation phenomena random processes noise and Brownian motion;
 Probability theory stochastic processes and statistics;
 Theory and models of film growth