The transition metal dichalcogenide 1T-TaS2 forms charge density waves due to the quasi-two-dimensionality of its electronic structure. Here we show how the growth of Rb nanowires on the surface of 1T-TaS2 affects the superstructure of the charge density waves. Scanning tunneling microscopy and low-energy electron diffraction studies show the replacement of the normal TaS2 room temperature 13×13 phase by c(23×4)rect. and 3×3 superstructures depending on the state of nanowire growth. Furthermore, angle resolved photoemission studies give evidence for a metal to semiconductor transition when the superstructure of the charge density wave is changed. These changes are discussed in the context of nanowire growth, which is accompanied by a change in the dimensionality of the electronic states of 1T-TaS2.