Electron affinity of Bi using infrared laser photodetachment threshold spectroscopy
Abstract
We report the results of high-resolution infrared laser photodetachment threshold experiments on the negative ion of bismuth. The hyperfine structure of the neutral and negative-ion ground states are included in the threshold model. The electron affinity of 209Bi is determined to be 7600.66(10) cm-1 [942.362(13) meV].
- Publication:
-
Physical Review A
- Pub Date:
- August 2001
- DOI:
- 10.1103/PhysRevA.64.024501
- Bibcode:
- 2001PhRvA..64b4501B
- Keywords:
-
- 32.10.Hq;
- 32.80.Gc;
- 32.10.Fn;
- Ionization potentials electron affinities;
- Photodetachment of atomic negative ions;
- Fine and hyperfine structure