Review of the Shockley-Ramo theorem and its application in semiconductor gamma-ray detectors
Abstract
The Shockley-Ramo theorem is reviewed based on the conservation of energy. This review shows how the energy is transferred from the bias supplies to the moving charge within a device. In addition, the discussion extends the original theorem to include cases in which a constant magnetic field is present, as well as when the device medium is heterogeneous. The rapid development of single polarity charge sensing techniques implemented in recent years on semiconductor γ-ray detectors are summarized, and a fundamental interpretation of these techniques based on the Shockley-Ramo theorem is presented.
- Publication:
-
Nuclear Instruments and Methods in Physics Research A
- Pub Date:
- May 2001
- DOI:
- 10.1016/S0168-9002(01)00223-6
- Bibcode:
- 2001NIMPA.463..250H