Lorentz angle measurements in irradiated silicon detectors between 77 and 300 K

Future experiments are using silicon detectors in a high radiation environment and in high magnetic fields. The radiation tolerance of silicon improves by cooling it to temperatures of approximately 130 K. Charge carriers generated in silicon by traversing particles are deflected due to the Lorentz force. We present measurements of the Lorentz angle in irradiated silicon detectors between 77 and 300 K. These results and the ones obtained from non-irradiated detectors are compared with simulations.