Development of GaAs-CCDs for X-ray detection
Abstract
Measurements of the performance of a Resistive Gate CCD will be shown and discussed. A short description of structure and layout will be followed by X-ray spectra, linearity, noise, SNR and energy resolution. A charge transfer efficiency of calculated with the classical method of 0.99958±0.00002 was reached. Simulation and layout of a newly designed X-ray Schottky CCD will be presented.
- Publication:
-
Nuclear Instruments and Methods in Physics Research A
- Pub Date:
- March 2001
- DOI:
- 10.1016/S0168-9002(00)01098-6
- Bibcode:
- 2001NIMPA.460...72L
