Characterization of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures
Abstract
We have studied electronic and structural characterizations of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures. An improved low-temperature electron mobility of μ e=5.45×105 cm 2 V s in [ 1¯ 1 0] was confirmed for a directed Hall-bar sample when Si-doped InAlAs layer was slightly etched. In addition, in-plane mobility anisotropy of 40% between [1 1 0] and [ 1¯ 1 0] directions was confirmed. This anisotropy seems to be originated from the different undulation period between [ 1¯ 1 0] and [1 1 0] directions. We theoretically calculated electron mobility taking both alloy disorder scattering and background impurity scattering into account. It is found that the calculated and experimental values are in good agreement.
- Publication:
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Journal of Crystal Growth
- Pub Date:
- July 2001
- DOI:
- Bibcode:
- 2001JCrGr.227..155G