Refractive index change caused by electron irradiation in amorphous As-S and As-Se thin films coated with different metals
Abstract
The refractive index change caused by electron irradiation was measured in amorphous As-S and As-Se thin films coated with different metals. Metal atoms/ions diffused into the films during irradiation. The diffusion was dependent on the metal and influenced the refractive index. The influence was smallest in As40S60 films although these films possessed the highest overall refractive index changes. Au atoms/ions were almost immobile in all films while Ag atoms/ions had the highest mobility. Their high mobility allowed them to diffuse laterally within the film.
- Publication:
-
Journal of Applied Physics
- Pub Date:
- September 2001
- DOI:
- 10.1063/1.1388862
- Bibcode:
- 2001JAP....90.2206N
- Keywords:
-
- 78.20.Ci;
- 78.66.Jg;
- 61.80.Fe;
- 61.82.Fk;
- 66.30.Jt;
- Optical constants;
- Amorphous semiconductors;
- glasses;
- Electron and positron radiation effects;
- Semiconductors;
- Diffusion of impurities